All-electrical measurements of direct spin Hall effect in GaAs with Esaki diode electrodes

Electrical spin injection and detection in lateral all-semiconductor devices

Both electrical injection and detection of spin-polarized electrons are demonstrated in a single wafer allsemiconductor GaAs-based lateral spintronic device, employing p+Ga,Mn As /n+-GaAs ferromagnetic Esaki diodes as spin aligning contacts. Spin-dependent phenomena, such as spin precession and spin-valve effect, are observed in nonlocal signal and the measurements reveal the unusual origin of ...

SPIN-DEPENDENT TRANSPORT IN Mn DOPED GaAs AND GaN DIODES

OF DOCTORAL DISSERTATION HELSINKI UNIVERSITY OF TECHNLOGY P.O. BOX 1000, FI-02015 TKK http://www.tkk.fi Author Heikki Holmberg Name of the dissertation Spin-dependent transport in Mn Doped GaAs and GaN diodes Manuscript submitted 16.11.2007 Manuscript revised 4.2.2008 Date of the defence 14.3.2008 Monograph Article dissertation (summary + original articles) Faculty Faculty of Electronics, Commu...

Dynamic nuclear spin polarization in an all-semiconductor spin injection device with (Ga,Mn)As/n-GaAs spin Esaki diode

Electrical properties of GaAs photonic crystal cavity lateral p-i-n diodes

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Electrical spin injection into high mobility 2D systems.

We report on spin injection into a high mobility 2D electron system confined at an (Al,Ga)As/GaAs interface, using (Ga,Mn)As Esaki diode contacts as spin aligners. We measured a clear nonlocal spin valve signal, which varies nonmonotonically with the applied bias voltage. The magnitude of the signal cannot be described by the standard spin drift-diffusion model, because at maximum this would re...